频率范围：10MHz to 40MHz；输出波形：CMOS
电源电压：3.3 V Typ.；频率/温度特性：±0.1×10-6 Max. (-40°C to +85°C)
频率老化：±3.0×10-6 Max. / 20 years
外部尺寸：5.0×3.2×1.45 mm(4 pins)
功能：超高稳定性，宽温度范围
应用领域：小基站，Stratum3，SyncE，IEEE1588
TG5032CFN：爱普生(EPSON) 温补晶振、TCXO / VC-TCXO、超高稳定性4pins
TG5032CFN常用频率列表如下：
规格型号 | 产品编码 | MOQ (PCS) |
TG5032CFN 10.000000MHz CAGNDA | X1G005391xxxx00 | 1000 |
TG5032CFN 12.800000MHz CAGNDA | X1G005391xxxx00 | 1000 |
TG5032CFN 19.200000MHz CAGNDA | X1G005391xxxx00 | 1000 |
TG5032CFN 20.000000MHz CAGNDA | X1G005391xxxx00 | 1000 |
TG5032CFN 24.576000MHz CAGNDA | X1G005391xxxx00 | 1000 |
TG5032CFN 25.000000MHz CAGNDA | X1G005391xxxx00 | 1000 |
TG5032CFN 25.600000MHz CAGNDA | X1G005391xxxx00 | 1000 |
TG5032CFN 26.000000MHz CAGNDA | X1G005391xxxx00 | 1000 |
TG5032CFN 30.720000MHz CAGNDA | X1G005391xxxx00 | 1000 |
TG5032CFN 38.400000MHz CAGNDA | X1G005391xxxx00 | 1000 |
TG5032CFN 38.800000MHz CAGNDA | X1G005391xxxx00 | 1000 |
TG5032CFN 40.000000MHz CAGNDA | X1G005391xxxx00 | 1000 |
EPSON 温补晶振TCXO: TG5032CFN
• 频率范围：10MHz to 40MHz
• 输出波形：CMOS
• 电源电压：3.3 V Typ.
• 频率/温度特性：±0.1×10-6 Max.(-40°C to +85°C)
• 频率老化：±3.0×10-6 Max. / 20 years
• 外部尺寸：5.0×3.2×1.45 mm（4 pins）
• 应用领域：
小基站，Stratum3，SyncE，IEEE1588
•功能：
超高稳定性，宽温度范围
• 小基站(Small Cells)
• Stratum3
• 毫微微蜂窝基站 (Femtocell)
• 网络系统 (Network system etc.)
TG5032CFN是CMOS输出的超高稳定性温度补偿晶体振荡器，并使用晶体单元的基本振荡产生削波正弦波输出。这实现了频率为10至40MHz的低相位噪声，并且适用于包括小单元的参考时钟。这使产品符合各种标准，包括GR-1244-CORE Stratum3、G.8262.1、G.8273.2（A级、B级）。
规格 (特征)
项目 | 符号 | TG5032CFN (CMOS) | 条件 / 备注 | |
VC-TCXO | TCXO | |||
输出频率范围 | f0 | 10 MHz to 40 MHz | ||
10, 12.8, 19.2, 20, 24.576, 25, 25.6, 26, | Standard frequency | |||
电源电压 | VCC | C: 3.3 V ± 5 % ( Standard ) | ||
储存温度 | T_stg | -40°C to +90°C | Storage as single product | |
工作温度 | T_use | G : -40°C to +85°C | ||
a) 频率稳定度 | f_tol | ± 1.0 × 10-6Max. | After reflow, +25 °C | |
b) 频率/温度特性 | fo-TC | A: ±0.1 × 10-6 Max. / G : -40°C to +85°C | Reference to (fmax + fmin) / 2 | |
c) 频率/负载系数 | fo-Load | ± 0.1 × 10-6 Max. | Load ± 10 % | |
d) 频率/电压系数 | fo-VCC | ± 0.1 × 10-6 Max. | VCC ± 5 % | |
e) 频率老化 | f_age | ± 0.5 × 10-6 Max. | +25°C , First year | |
± 3.0 × 10-6 Max. | +25°C , 20 years | |||
滞留稳定性 （恒温） | - | ± 0.01 × 10-6 Max. (+25°C, 24 hours) | After 10 days of continuous operation. | |
± 0.04 × 10-6 Max. (+25°C, 24 hours) | After 48 hours of continuous operation. | |||
漂移产生 | - | - | Compliant with | |
自由运行精度 | - | ± 4.6 × 10-6 Max. | This includes Item a), b), c), d) and e) | |
功耗 | ICC | 5.0 mA Max. | 10 MHz ≦ f0 ≦ 26 MHz | |
输入阻抗 | Rin | 100 kΩ Min. | - | VC- GND (DC) |
频率控制范围 | f_cont | ± 5 × 10-6 to ± 10 ×10-6 | - | J,D : VC= 1.5 V ± 1.0 V |
频率变化极性 | - | Positive polarity | - | |
占空比 | SYM | - | ||
输出电压 | VOH | - | ||
VOL | - | |||
输出电压 | VPP | 0.8 V Min. | Peak to Peak | |
上升/下降时间 | tr/tf | 8.0 ns Max. | 10 % VCC to 90 % VCC level | |
启动时间 | t_str | 5.0 ms Max. (Non-Filter: Standard) | T = 0 at 90 % VCC | |
输出负载条件 | Load | 10 kΩ/ 10 pF | ||
输入电压 | VIH | 70 % VCC Min. | OE terminal | |
VIL | 30 % VCC Max. | OE terminal | ||
TG5032CFN温补晶振产品名称参数：
(1) 产品名称 (标准形式)
TG5032CFN 30.720000MHz C A G N D A
TG5032SFN 30.720000MHz C A G N D A
① ② ③ ④ ⑤ ⑥⑦⑧⑨
① Model ② Output ((C: CMOS, S: Clipped sine wave) ③ Frequency
④ Supply voltage (C: 3.3V Typ.)
⑤ Frequency / temperature characteristics (A: ±0.1× 10-6 Max., H: ±0.25× 10-6 Max., B: ±0.28× 10-6 Max.,)
⑥ Operating temperature (G: -40 °C to +85 °C) ⑦ OE function (N: Non)
⑧ VC function(A: VC =any, D: VC =1.5 V, E: VC =1.65 V, N: Non)
⑨ Internal identification code ("A" is default)
(2) 产品型号/ 产品编码 (Blank section is decided by each detail specifications.)
TG5032CFN X1G005391xxxx00
TG5032SFN X1G005401xxxx00
① ② ③ ④ ⑤
① Crystal devices ② Model ③ Pb free code（1：EU RoHS / 2: Pb free）
④ Detail specifications ⑤ Packing（Recommended packing 00：1K pcs/Reel）
Frequency | Part number | |
[MHz] | TG5032CFN (Size: 5.0 x 3.2) | TG5032SFN (Size: 5.0 x 3.2) |
VCC = 3.3 V | VCC = 3.3 V | |
Suffix: CAGNDA | Suffix: CAGNDA | |
10 | X1G005391xxxx00 | X1G005401xxxx00 |
12.8 | X1G005391xxxx00 | X1G005401xxxx00 |
19.2 | X1G005391xxxx00 | X1G005401xxxx00 |
20 | X1G005391xxxx00 | X1G005401xxxx00 |
24.576 | X1G005391xxxx00 | X1G005401xxxx00 |
25 | X1G005391xxxx00 | X1G005401xxxx00 |
25.6 | X1G005391xxxx00 | X1G005401xxxx00 |
30.72 | X1G005391xxxx00 | X1G005401xxxx00 |
38.4 | X1G005391xxxx00 | X1G005401xxxx00 |
38.88 | X1G005391xxxx00 | X1G005401xxxx00 |
40 | X1G005391xxxx00 | X1G005401xxxx00 |
为保持稳定运行，在尽可能靠近晶体产品电源端子的位置（VCC-GND之间）提供0.1μF旁路电容。
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