有源差分晶振 ,输出频率: 25MHz to 500MHz
输出:LV-PECL,电源电压:2.5 V Typ. / 3.3 V Typ.
频率稳定度: ±25 × 10-6 , ±50 × 10-6;功能: Output enable(OE) or Standby(ST)
工作温度: -40 °C to +85 °C, -40 °C to +105 °C
低相位抖动:50 fs Max.(fo > 391 MHz),外部尺寸: 2.0 ×1.6 ×0.63 mm
SG2016EGN:爱普生 (EPSON)有源差分晶振,输出LV-PECL
SG2016EGN常用频率列表如下:
规格型号 | 产品编码 | MOQ (PCS) |
SG2016EGN | X1G006131xxxx15 | 2000 |
SG2016EGN 156.250000MHZ CDGPZA | X1G006131xxxx15 | 2000 |
SG2016EGN 156.250000MHz CDHPZA | X1G006131xxxx15 | 2000 |
SG2016EGN 156.250000MHz DDGPZA | X1G006131xxxx15 | 2000 |
SG2016EGN 156.250000MHz DDHPZA | X1G006131xxxx15 | 2000 |
SG2016EGN 164.425000MHZ CDGPZA | X1G006131xxxx15 | 2000 |
SG2016EGN 164.425000MHz CDHPZA | X1G006131xxxx15 | 2000 |
SG2016EGN 212.500000MHZ CDGPZA | X1G006131xxxx15 | 2000 |
SG2016EGN 212.500000MHZ CDHPZA | X1G006131xxxx15 | 2000 |
爱普生(EPSON)有源差分晶振: SG2016EGN、SG2520EGN
l 有源差分晶振
l 输出频率: 25MHz to 500MHz
l 输出:LV-PECL
l 电源电压:2.5 V Typ. / 3.3 V Typ.
l 频率稳定度: ±25 × 10-6 , ±50 × 10-6
l 功能: Output enable(OE) or Standby(ST)
l 工作温度: -40 °C to +85 °C, -40 °C to +105 °C
l 低相位抖动:50 fs Max.(fo > 391 MHz)
l 外部尺寸: 2.0 ×1.6 ×0.63 mm
● 网络设备(路由器、交换机、光模块等)
● 数据中心
● 测试和测量设备,工厂自动化
● 高速转换器(ADC和DAC)
5G将成倍增加网络通信流量。5G通信网络需要高速和宽带,同时最小化噪声。这将通过使用小型光学模块的通信设备的高频、低抖动参考时钟来实现。SG2016EGN/SG2520EGN是非常受欢迎的SG3225EEN系列的下一代产品,由于在较小的封装中使用了内部设计的带有温度补偿的IC,因此具有相同的功能组合,具有广泛的可用频率、低抖动和改进的频率容限性能。
规格 (特征)
项目 | 符号 | 规格说明 | 条件 / 备注 | |||
LV-PECL | LVDS | |||||
SG2016EGN SG2520EGN | SG2016VGN SG2520VGN | |||||
输出频率范围 | f0 | 25 MHz to 500 MHz | Please contact us about available frequencies. | |||
电源电压 | VCC | C: 3.3 V ± 5 % D: 2.5 V ± 5 % | E: 1.8 V ± 5 % | |||
储存温度 | T_stg | -55°C to +125°C | ||||
工作温度 | T_use | G: -40 °C to +85 °C, H: -40 °C to +105 °C | ||||
频率稳定度 | f_tol | D: ±25 × 10-6 Max J: ±50 × 10-6 Max | Includes initial frequency tolerance, frequency / temperature characteristics, frequency / voltage coefficient and 10 years aging (+25 °C) | |||
功耗 | ICC | 60 mA Max. | — | OE or S̅T̅= VCC, L_ECL = 50 Ω | ||
— | 25 mA / 30 mA / 25 mA Max. | 25 mA / – / 25 mA Max. | 25 MHz ≤ fo < 212 MHz | OE or S̅T̅= VCC, Output option: A / B / C | ||
28 mA / 35 mA / 28 mA Max. | 212 MHz ≤ fo < 392 MHz | |||||
28 mA / 35 mA / 30 mA Max. | 392 MHz ≤ fo ≤ 500 MHz | |||||
禁用电流 | I_dis | 35 mA Max. | 20 mA Max. | OE = GND | ||
待机电流 | I_std | 30 μA Max. | S̅T̅= GND, T_use Max. = +85 °C | |||
60 μA Max. | S̅T̅= GND, T_use Max. = +105 °C | |||||
占空比 | SYM | 45% to 55% | At output crossing point | |||
输出电压 (LV-PECL) | VOH | VCC - 1.1 V Min. | — | Output option: A, DC characteristic | ||
VOL | VCC - 1.5 V Max. | |||||
差分摆动 | VSW | 0.8 V to 2.0 V | 500 mV to 900 mV | 500 mV to 900 mV | Output option: A | |
— | 800 mV to 1600 mV | — | Output option: B | |||
— | 600 mV to 1200 mV | 600 mV to 1200 mV | Output option: C | |||
输出电压 (LVDS) | VOD | — | 250 mV to 450 mV | 250 mV to 450 mV | Output option: A | Differential output voltage, VOD1, VOD2 |
400 mV to 800 mV | — | Output option: B | ||||
300 mV to 600 mV | 300 mV to 600 mV | Output option: C | ||||
dVOD | — | 50 mV Max. | dVOD = | VOD1 - VOD2 | | |||
VOS | — | 1.15 V to 1.35 V | 0.65 V to 0.85 V | Offset voltage, VOS1, VOS2 | ||
dVOS | — | 50 mV Max. | dVOS = | VOS1 - VOS2 | | |||
输出负载条件 | L_ECL | 50 Ω | — | Terminated to VCC - 2.0 V | ||
L_LVDS | — | 100 Ω | Connected between OUT and /OUT | |||
输入电压 | VIH | 70% VCC Min. | OE or S̅T̅ terminal | |||
VIL | 30% VCC Max. | |||||
上升/下降时间 | tr / tf | 0.35 ns Max. | LV-PECL: 20 % - 80 % (VOH - VOL) LVDS:20 % - 80 % differential output peak to peak | |||
启动时间 | t_osc | 10 ms Max. | T = 0 at 90 % VCC | |||
相位抖动 | tPJ | 250 fs Max | 250 fs Max | 400 fs Max | 25 MHz ≤ fo < 100 MHz | Offset frequency fo < 50 MHz: 12 kHz to 5 MHz fo ≥ 50 MHz: 12 kHz to 20 MHz |
90 fs Max | 100 fs Max | 130 fs Max | 100 MHz ≤ fo ≤ 156 MHz | |||
70 fs Max | 60 fs Max | 70 fs Max | 156 MHz < fo ≤ 212 MHz | |||
60 fs Max | 50 fs Max | 60 fs Max | 212 MHz < fo ≤ 391 MHz | |||
50 fs Max | 50 fs Max | 60 fs Max | 391 MHz < fo ≤ 500 MHz |
LV-PECL (Low Voltage Positive Emitter-Couple Logic):低压正发射极耦合逻辑
LVDS(Low Voltage Differential Signaling):低压差分信号
Pin # | Connection | Function | |||||||||
#1 | OE/S̅ T̅ | OE/S̅ T̅ terminal / active high
| |||||||||
#2 | NC | — | |||||||||
#3 | GND | GND terminal | |||||||||
#4 | OUT | Output terminal (Positive) | |||||||||
#5 | O̅U̅T | Output terminal (Negative) | |||||||||
#6 | VCC | VCC terminal |
SG2016EGN等系列晶振产品名称参数:
(1) 产品名称 (标准形式)
SG2016EGN 156.250000MHZ C D H P Z A
SG2520EGN 156.250000MHZ C D H P Z A
① ② ③ ④ ⑤⑥⑦⑧⑨
① Model ② Output (E: LV-PECL, V: LVDS) ③ Frequency ④ Supply voltage
⑤ Frequency tolerance ⑥ Operating temperature range
⑦ Function ⑧ Output disable type (Z: High impedance)
⑨ Output option, Internal identification code (A: default)
④ Supply voltage | |
C | 3.3 V Typ. |
D | 2.5 V Typ. |
E* | 1.8 V Typ. |
* "E" is only for SG2016VHN and SG2520VHN
⑤ Frequency tolerance | |
D | ±25 × 10-6 |
J | ±50 × 10-6 |
⑥ Operating temperature range | |
G | -40 °C to +85 °C |
H | -40 °C to +105 °C |
⑦ Function | |
P | OE |
S | S̅T̅ |
⑨ Output option | ||
SG2016EGN / SG2520EGN | SG2016VGN / SG2520VGN | |
A | Default | VOD = 250 mV to 450 mV |
B* | — | VOD = 400 mV to 800 mV |
C | — | VOD = 300 mV to 600 mV |
*Not available for VCC = 1.8 V Typ
(2) 产品型号 / 产品编码 (空白部分由每个详细规范决定。)
SG2016EGN X1G006131xxxx15
SG2016VGN X1G006111xxxx15
SG2520EGN X1G005881xxxx15
SG2520VGN X1G005901xxxx15
① ② ③ ④ ⑤
① Crystal devices ② Model ③ Pb free code(1:EU RoHS / 2: Pb free)
④ Detail specifications
⑤ Packing(15:Recommended packing 2000 pcs/Reel)
为了保持稳定运行,在尽可能靠近晶体产品电源端子的位置(VCC-GND之间)提供0.01µF to 0.1µF去耦电容。